• DocumentCode
    1098181
  • Title

    Comparison of two recent semiconductor laser models

  • Author

    Buus, Jens

  • Author_Institution
    Plessey Res. Caswell Ltd., Towcester, UK
  • Volume
    19
  • Issue
    9
  • fYear
    1983
  • fDate
    9/1/1983 12:00:00 AM
  • Firstpage
    1356
  • Lastpage
    1358
  • Abstract
    Two rather similar models for the dynamic behavior of semiconductor lasers, including spatial variations in the carrier density and the intensity, are compared. Both models are applied to a specific example and very different results are found. The reason for the discrepancy is that different numerical methods are used to solve the field equation. The validity of the methods is discussed.
  • Keywords
    Semiconductor lasers; Algorithms; Charge carrier density; DH-HEMTs; Electron beams; Indium phosphide; Laser beams; Laser modes; Nonlinear equations; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1072041
  • Filename
    1072041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098181