Title :
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
Author :
Ting-En Hsieh ; Chang, Edward Yi ; Yi-Zuo Song ; Yueh-Chin Lin ; Huan-Chung Wang ; Shin-Chien Liu ; Salahuddin, Sania ; Hu, Chenming Calvin
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al2O3/AlN stack gate insulator is presented. The trapping effect of Al2O3/GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an OFF-state breakdown voltage of 600 V, and high ON/OFF drain current ratio of ~109.
Keywords :
III-V semiconductors; MIS devices; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; passivation; wide band gap semiconductors; Al2O3-AlGaN-GaN; AlN; MIS-HEMT; PEALD interfacial passivation layer; gate recessed HEMT; high electron mobility transistor; low threshold voltage hysteresis; plasma enhanced atomic layer deposition; quasinormally off HEMT; stack gate insulator; voltage 600 V; Aluminum gallium nitride; Aluminum oxide; Gallium nitride; Hysteresis; III-V semiconductor materials; Insulators; Logic gates; Al₂O₃ and AlN; Al2O3 and AlN; GaN; gate insulator; gate recessed; interfacial passivation layer (IPL); interfacial passivation layer (IPL).; metal-insulator-semiconductor high electron-mobility transistor (MIS-HEMT); normally-OFF; plasma enhanced atomic layer deposition (PE-ALD); threshold voltage hysteresis;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2321003
