Growth of Thick Films CdTe From the Vapor Phase

Author

Greiffenberg, D. ; Sorgenfrei, R. ; Bachem, K.H. ; Fiederle, M.

Author_Institution

Albert-Ludwigs-Univ. Freiburg, Freiburg

Volume

54

Issue

4

fYear

2007

Firstpage

773

Lastpage

776

Abstract

100 thick films of CdTe were grown on semi-insulating (100) GaAs substrates by physical vapor transport (PVT) in a modified molecular beam epitaxy facility. The grown layers were highly oriented as revealed from X-ray pole figure measurements. Temperature- and intensity-dependent photoluminescence measurements were taken before and after the chemical removal of the substrate to determine the effect of the GaAs substrate and to estimate the crystallographic quality of the layers. Current-voltage characteristics were performed to obtain the resistitivity of the layers with .

Keywords

II-VI semiconductors; cadmium compounds; electrical resistivity; molecular beam epitaxial growth; photoluminescence; semiconductor counters; CdTe-GaAs - Interface; GaAs - Surface; X-ray pole figure measurement; chemical removal; crystallographic quality; current-voltage characteristics; detector grade thick films; intensity-dependent photo-luminescence; molecular beam epitaxy facility; physical vapor transport; resistitivity; semiinsulating substrates; temperature-dependent photoluminescence measurement; thick film growth; Chemicals; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Substrates; Temperature; Thick films; X-ray detection; X-ray detectors; X-ray diffraction; CdTe; MBE; photoluminescence; radiation detector; thick films; x-ray diffraction;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.902353

Filename

4291724