Title :
High Temperature Properties of CdTe Crystals, Doped by Sb
Author :
Fochuk, P. ; Grill, R. ; Nykonyuk, Y.. ; Krustok, J. ; Armani, N. ; Zakharuk, Z. ; Grossberg, M.. ; Panchuk, O.
Author_Institution :
Chernivtsi Nat. Univ., Chernivtsi
Abstract :
Electrical properties of CdTe single crystals doped by Sb were studied in situ at high temperature point defect equilibrium under well defined Cd and Te vapour pressure. Up to samples revealed p-type conductivity both under Cd and Te saturation. The position of the deep acceptor level was determined using hole density temperature dependency at 350-650 K. The point defects responsible for hole density are supposed to be acceptors. The n-type conductivity above is determined by intrinsic point defects: electrons under Te saturation due to native disorder and Cd interstitials under Cd saturation.
Keywords :
Hall effect; II-VI semiconductors; antimony; cadmium compounds; deep levels; electrical conductivity; high-temperature effects; impurity states; interstitials; semiconductor counters; CdTe:Sb - System; Hall effect; deep acceptor level; detector fabrication; electrical properties; high temperature point defect equilibrium; hole density temperature dependency; interstitials; intrinsic point defects; n-type conductivity; native disorder; p-type conductivity; temperature 350 K to 650 K; vapour pressure; Conductivity; Crystalline materials; Crystals; Doping; Electrons; Hall effect; Ionization; Photonic band gap; Tellurium; Temperature dependence; CdTe; Hall effect; Sb; high temperature; modeling; photoluminescence; point defects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.902368
