Title :
Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions
Author :
Chiu, L.C. ; Yu, K.L. ; Margalit, S. ; Chen, T.R. ; Koren, U. ; Hasson, A. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, CA, USA
fDate :
9/1/1983 12:00:00 AM
Abstract :
A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED´s and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
Keywords :
Gallium materials/devices; Gallium materials/lasers; Indium materials/devices; Light-emitting diodes (LED´s); Doping; Electron mobility; Helium; Heterojunctions; Hot carriers; Indium phosphide; Laser modes; Leakage current; Light emitting diodes; Semiconductor process modeling;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1072052
