• DocumentCode
    1098315
  • Title

    Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions

  • Author

    Chiu, L.C. ; Yu, K.L. ; Margalit, S. ; Chen, T.R. ; Koren, U. ; Hasson, A. ; Yariv, Amnon

  • Author_Institution
    California Institute of Technology, Pasadena, CA, USA
  • Volume
    19
  • Issue
    9
  • fYear
    1983
  • fDate
    9/1/1983 12:00:00 AM
  • Firstpage
    1335
  • Lastpage
    1338
  • Abstract
    A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED´s and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
  • Keywords
    Gallium materials/devices; Gallium materials/lasers; Indium materials/devices; Light-emitting diodes (LED´s); Doping; Electron mobility; Helium; Heterojunctions; Hot carriers; Indium phosphide; Laser modes; Leakage current; Light emitting diodes; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1072052
  • Filename
    1072052
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098315