• DocumentCode
    1098360
  • Title

    Dynamics of Point Defects in Tellurium-Rich CdTe

  • Author

    Grill, Roman ; Franc, J. ; Belas, E. ; Höschl, P. ; Nahlovskyy, B. ; Moravec, P. ; Fochuk, P. ; Verzhak, Y. ; Panchuk, O.

  • Author_Institution
    Charles Univ., Prague 2
  • Volume
    54
  • Issue
    4
  • fYear
    2007
  • Firstpage
    792
  • Lastpage
    797
  • Abstract
    The evolution of defect structure occurring during the cooling of Tellurium-rich CdTe is studied theoretically and experimentally. Classical nucleation theory is applied to comprehend the precipitation of excess Te and a formation of Te precipitates both in pure lattice and on extended defects is taken into account. Numerical simulations demonstrate significant effect of the cooling process on the room temperature precipitate magnitude and density. Theoretical results are compared with high temperature in-situ measurements of Te-rich CdTe:In. It is shown that the cooling rate significantly affects the temperature dependence of the conductivity. Characteristic temperatures, at which excess Te precipitates, are identified as apparent bows in measured dependencies. Optimum annealing-cooling treatment to obtain detector grade CdTe is suggested.
  • Keywords
    II-VI semiconductors; cadmium compounds; point defects; precipitation; CdTe - Binary; classical nucleation theory; defect structure; point defects; precipitation; Annealing; Conductivity; Cooling; Doping; Numerical simulation; Physics; Semiconductor process modeling; Tellurium; Temperature dependence; Temperature measurement; CdTe; high-temperature conductivity; theory of precipitation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.901232
  • Filename
    4291736