DocumentCode
1098360
Title
Dynamics of Point Defects in Tellurium-Rich CdTe
Author
Grill, Roman ; Franc, J. ; Belas, E. ; Höschl, P. ; Nahlovskyy, B. ; Moravec, P. ; Fochuk, P. ; Verzhak, Y. ; Panchuk, O.
Author_Institution
Charles Univ., Prague 2
Volume
54
Issue
4
fYear
2007
Firstpage
792
Lastpage
797
Abstract
The evolution of defect structure occurring during the cooling of Tellurium-rich CdTe is studied theoretically and experimentally. Classical nucleation theory is applied to comprehend the precipitation of excess Te and a formation of Te precipitates both in pure lattice and on extended defects is taken into account. Numerical simulations demonstrate significant effect of the cooling process on the room temperature precipitate magnitude and density. Theoretical results are compared with high temperature in-situ measurements of Te-rich CdTe:In. It is shown that the cooling rate significantly affects the temperature dependence of the conductivity. Characteristic temperatures, at which excess Te precipitates, are identified as apparent bows in measured dependencies. Optimum annealing-cooling treatment to obtain detector grade CdTe is suggested.
Keywords
II-VI semiconductors; cadmium compounds; point defects; precipitation; CdTe - Binary; classical nucleation theory; defect structure; point defects; precipitation; Annealing; Conductivity; Cooling; Doping; Numerical simulation; Physics; Semiconductor process modeling; Tellurium; Temperature dependence; Temperature measurement; CdTe; high-temperature conductivity; theory of precipitation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2007.901232
Filename
4291736
Link To Document