Title :
Quantum-well perfection requirements for large-scale applications of exciton-base devices
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
Exciton-based devices have been shown to display remarkable properties that can find applications in optical information processing. However, if these devices are to be used in systems where many devices and chips involving the excitonic effect are to be used, there has to be stringent control over the quantum-well perfection. In this paper we examine the effect of exciton linewidth and well size fluctuations on a number of device-related effects based on the quantum-confined Stark effect. We find that for many applications a one-monolayer variation in structures fabricated in different runs will drastically diminish the system performance
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; excitons; gallium arsenide; optical information processing; semiconductor quantum wells; GaAs-Al0.3Ga0.7As; GaAs/Al0.3Ga0.7As quantum well structure; chips; device-related effects; exciton linewidth; exciton-base devices; excitonic effect; large-scale applications; one-monolayer variation; optical information processing; quantum-confined Stark effect; quantum-well perfection requirements; structures; system performance; well size fluctuations; Control systems; Displays; Excitons; Fluctuations; Information processing; Large-scale systems; Optical devices; Quantum well devices; Quantum wells; Stark effect;
Journal_Title :
Quantum Electronics, IEEE Journal of