Title :
The performances of (InAs)1/(GaAs)2 short-period superlattice strained single-quantum-well laser on GaAs substrate
Author :
Kurakake, Hirohide ; Uchida, Tom ; Kubota, Shinichi ; Soda, Haruhisa ; Yamazaki, Susumu
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
4/1/1994 12:00:00 AM
Abstract :
We fabricated an (InAs)1/(GaAs)2 short-period superlattice (SPS) strained quantum-well laser at 1.07 μm by MOVPE. The SPS active layer has 10 periods of (InAs)1/(GaAs)2 and an average mismatch of over 2.2%. In highly strained conditions the device showed a lasing wavelength of 1.07 μm, a threshold of 130 A/cm2, and a characteristic temperature T0 of 175 K. We measured the gain characteristic by the Hakki and Paoli method at LED conditions and obtained a high differential gain of 2.0×10-15 cm2 at the threshold current
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; internal stresses; laser transitions; semiconductor growth; semiconductor lasers; semiconductor superlattices; vapour phase epitaxial growth; (InAs)1/(GaAs)2 short-period superlattice strained single-quantum-well laser; 1.07 mum; 175 K; GaAs; GaAs substrate; Hakki and Paoli method; InAs-GaAs; average mismatch; characteristic temperature; differential gain; gain characteristic; highly strained conditions; lasing wavelength; light emitting diode conditions; metalorganic vapour phase epitaxy; short period superlattice active layer; threshold current; Current measurement; Epitaxial growth; Epitaxial layers; Gain measurement; Gallium arsenide; Light emitting diodes; Quantum well lasers; Superlattices; Temperature; Wavelength measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
