Estimation of Single Event Transient Voltage Pulses in VLSI Circuits From Heavy-Ion-Induced Transient Currents Measured in a Single MOSFET

Author

Kobayashi, Daisuke ; Saito, Hirobumi ; Hirose, Kazuyuki

Volume

54

Issue

4

fYear

2007

Firstpage

1037

Lastpage

1041

Abstract

Described is an estimation technique of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET. Waveforms of the transient voltage pulses are fully estimated by using transient current data obtained in various drain voltage conditions. Modeling of the irradiated device behavior for use in device/circuit simulations is not required. The concept is validated using a 2-D mixed-mode device simulation.

Keywords

MOSFET; VLSI; ion beam effects; 2-D mixed-mode device simulations; MOSFET; VLSI circuits; drain voltage; heavy-ion-induced transient currents; single event transient voltage pulses; Circuit simulation; Current measurement; Extraterrestrial measurements; Inverters; MOSFET circuits; Pulse circuits; Pulse measurements; Radiation effects; Very large scale integration; Voltage; Estimation; graphical derivation; heavy ions; integrated circuit radiation effects; semiconductor device radiation effects; simulation; single event transients (SETs); transient currents; voltage pulses;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.891397

Filename

4291744