DocumentCode :
1098449
Title :
GaAs optoelectronic integrated light sources
Author :
Matsueda, Hideaki ; Sasaki, Shinya ; Nakamura, Michiharu
Author_Institution :
Hitachi, Ltd., Kokubunji, Tokyo, Japan
Volume :
1
Issue :
1
fYear :
1983
fDate :
3/1/1983 12:00:00 AM
Firstpage :
261
Lastpage :
269
Abstract :
A comprehensive discussion on key technology needed to realize GaAs optoelectronic integrated circuits (OEIC´s) is given, including heat dissipation, reflector formation, controlled diffusion, surface steps, high density electronic circuits, and structures for integration. Examples of horizontal-type integration as well as vertical type are compared, with some details of optical and electronic performance.
Keywords :
Electrooptic materials/devices; Gallium materials/lasers; Integrated optics; Electronic circuits; FETs; Ferroelectric materials; Gallium arsenide; Holographic optical components; Holography; Integrated optics; Light sources; Optical materials; Physics;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1983.1072064
Filename :
1072064
Link To Document :
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