DocumentCode :
1098521
Title :
A trapping mechanism for autodoping in silicon epitaxy—I. Theory
Author :
Wong, Man ; Reif, Rafael
Author_Institution :
Stanford University, Stanford, CA
Volume :
32
Issue :
2
fYear :
1985
fDate :
2/1/1985 12:00:00 AM
Firstpage :
83
Lastpage :
88
Abstract :
An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms ( 
) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.
) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.Keywords :
Atomic layer deposition; Differential equations; Doping profiles; Epitaxial growth; Epitaxial layers; Semiconductor process modeling; Silicon; Solid state circuits; Substrates; Tail;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.21916
Filename :
1484663
Link To Document :
