• DocumentCode
    1098521
  • Title

    A trapping mechanism for autodoping in silicon epitaxy—I. Theory

  • Author

    Wong, Man ; Reif, Rafael

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    32
  • Issue
    2
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    83
  • Lastpage
    88
  • Abstract
    An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms ( N_{A}^{0} ) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.
  • Keywords
    Atomic layer deposition; Differential equations; Doping profiles; Epitaxial growth; Epitaxial layers; Semiconductor process modeling; Silicon; Solid state circuits; Substrates; Tail;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.21916
  • Filename
    1484663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098521