DocumentCode :
109857
Title :
An InGaAs/InP DHBT With Simultaneous 
GHz and 4.3 V Breakdown Voltage
Author :
Rode, Johann C. ; Chiang, Han-Wei ; Choudhary, Prateek ; Jain, Vibhor ; Thibeault, Brian J. ; Mitchell, William J. ; Rodwell, Mark J. W. ; Urteaga, Miguel ; Loubychev, Dmitri ; Snyder, Andrew ; Wu, Ying ; Fastenau, Joel M. ; Liu, Amy W. K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Volume :
3
Issue :
1
fYear :
2015
fDate :
Jan. 2015
Firstpage :
54
Lastpage :
57
Abstract :
We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocyclobutene planarization, improving the open-base breakdown voltage BVCEO from 3.7 to 4.3 V.
Keywords :
III-V semiconductors; electrical contacts; electron beam lithography; gallium arsenide; heterojunction bipolar transistors; indium compounds; organic compounds; semiconductor device breakdown; submillimetre wave transistors; Breakdown Voltage; InGaAs-InP DHBT; InP-InGaAs-InP; InP-InGaAs-InP double heterojunction bipolar transistor; SiNx; base contacts; base-collector junction; benzocyclobutene planarization; electron beam lithography; emitter contacts; frequency 404 GHz; frequency 901 GHz; open-base breakdown voltage; triple-mesa structure; voltage 3.7 V to 4.3 V; Heterojunction bipolar transistors; IEEE Electron Devices Society; Indium gallium arsenide; Indium phosphide; Junctions; Silicon; HBT; InGaAs/InP DHBT; THz device;
fLanguage :
English
Journal_Title :
Electron Devices Society, IEEE Journal of the
Publisher :
ieee
ISSN :
2168-6734
Type :
jour
DOI :
10.1109/JEDS.2014.2363178
Filename :
6924726
Link To Document :
