Title :
Transient Response of Semiconductor Electronics to Ionizing Radiation. Recent Developments in Charge-Collection Measurement
Author :
McMorrow, Dale ; Ferlet-Cavrois, Veronique ; Paillet, Philippe ; Duhamel, Olivier ; Baggio, Jacques ; Boos, J. Brad ; Melinger, Joseph S.
Author_Institution :
Naval Res. Lab., Washington
Abstract :
Recent measurements of heavy-ion-induced charge- collection transients are presented. These measurements are possible for the first time because of recent developments in high- bandwidth, single-shot measurement technology, and exhibit several significant advantages over conventional (charge-sensitive preamplifier) charge-collection measurements. Heavy-ion induced transient measurements are presented for InGaAs/InAlAs HEMTs, AlSb/InAs HEMTs, GaAs HFETs and for SOI NMOS devices, and the significant advantages of this approach are described.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; charge measurement; gallium arsenide; high electron mobility transistors; indium compounds; ion beam effects; semiconductor device measurement; silicon-on-insulator; transient response; transients; AlSb-InAs - Interface; GaAs - Interface; HEMT; HFET; InGaAs-InAlAs - Interface; SOI NMOS transistor; Si - Interface; charge-collection measurement; heavy-ion-induced charge-collection transients; high- bandwidth single-shot measurement technology; ionizing radiation; semiconductor electronics; transient response; Bandwidth; Current measurement; HEMTs; Indium compounds; Indium gallium arsenide; Ionizing radiation; MODFETs; Preamplifiers; Time measurement; Transient response; AlSb/InAs HEMT; InGaAs HEMT; SOI; charge collection; laser SEE; single event effects; transient measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.896345
