DocumentCode
1098734
Title
10K Gate I2L and 1K component analog compatible bipolar VLSI technology—HIT-2
Author
Washio, Kastuyoshi ; Watanabe, Tomoyuki ; Okabe, Takahiro ; Horie, Noboru
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
32
Issue
2
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
237
Lastpage
241
Abstract
An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCEO of more than 10 V and an fT of 5 GHz, and lateral p-n-p transistors having an fT of 150 MHz.
Keywords
Analog circuits; Consumer products; Costs; Cutoff frequency; Dry etching; Isolation technology; Office automation; Oxidation; System-on-a-chip; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.21935
Filename
1484682
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