• DocumentCode
    1098734
  • Title

    10K Gate I2L and 1K component analog compatible bipolar VLSI technology—HIT-2

  • Author

    Washio, Kastuyoshi ; Watanabe, Tomoyuki ; Okabe, Takahiro ; Horie, Noboru

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    32
  • Issue
    2
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    237
  • Lastpage
    241
  • Abstract
    An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCEOof more than 10 V and an fTof 5 GHz, and lateral p-n-p transistors having an fTof 150 MHz.
  • Keywords
    Analog circuits; Consumer products; Costs; Cutoff frequency; Dry etching; Isolation technology; Office automation; Oxidation; System-on-a-chip; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.21935
  • Filename
    1484682