DocumentCode :
1098747
Title :
Annealing of Proton-Induced Random Telegraph Signal in CCDs
Author :
Nuns, T. ; Quadri, G. ; David, J.P. ; Gilard, O.
Author_Institution :
ONERA DESP, Toulouse
Volume :
54
Issue :
4
fYear :
2007
Firstpage :
1120
Lastpage :
1128
Abstract :
A silicon CCD imager has been irradiated with 10 MeV protons and measurements focused on random telegraph signal (RTS). A variance detection method is applied for quantifying the number of RTS after irradiation and through isochronal annealing. The observed behavior is analyzed and corresponds to the annealing of phosphorus-vacancies.
Keywords :
annealing; proton effects; silicon radiation detectors; isochronal annealing; phosphorus-vacancies; proton-induced random telegraph signal; silicon CCD imager; variance detection method; Annealing; Charge coupled devices; Electrons; Energy states; Fluctuations; Kinetic theory; Pixel; Protons; Telegraphy; Temperature; Annealing; CCD; irradiation; proton;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.902351
Filename :
4291771
Link To Document :
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