Title :
Characteristics of MOSFET prepared on Si/MgO.Al2O3/SiO2/Si structure
Author :
Hokari, Yasuaki ; Mikami, Masao ; Egami, Koji ; Tsuya, Hideki ; Kanamori, Mitsuru ; Kanamori, Masaru
Author_Institution :
NEC Corporation, Kanagawa, Japan
fDate :
2/1/1985 12:00:00 AM
Abstract :
A new silicon on insulator (SOI) wafer with epitaxial-Si/ epitaxial-MgO.Al2O3(0.1 µm)/SiO2(0.5 µm)/
Keywords :
Annealing; Electron mobility; FETs; MOSFET circuits; Molecular beam epitaxial growth; Parasitic capacitance; Semiconductor films; Silicon compounds; Silicon on insulator technology; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21938
