Constraints on the application of 0.5-µm MOSFET´s to ULSI systems

The characteristics of a MOSFET with an Leff= 0.5 µm, which is a building element of the next generation of ULSI\´s, are described from two viewpoints: 1) "deviation" from the scaling law and 2) "system level scaling," and are compared with those of 1.3-, 2-, and 3-µm design rules. In the light of the fact that further improvements in the characteristics of small-sized devices are diminishing, it is mentioned that from now on it will be more necessary to concentrate on the system-oriented approach, rather than device and process technologies. In addition, to aid the selection of a new standard for power supply voltage, the allowable operating bias regions in 0.5-µm devices are discussed.