Title :
CdTe Detector Characteristics At 30°C and 35°C When Using The Periodic Bias Reset Technique
Author :
Seino, Tomoyuki ; Takahashi, Isao
Author_Institution :
Hitachi Ltd., Ibaraki
Abstract :
The energy resolution of CdTe detectors typically deteriorates in several tens of minutes due to the polarization effect at 30degC. In this paper, the energy resolutions were evaluated at 30degC and 35degC, and the periodic bias reset technique was investigated as a way to stabilize the detector performance. Two different bias reset circuits were used, one was an exponential voltage change type and the other was a linear voltage change type. The 500 V bias with 0.5 s to 60 s reset durations and 1 min to 20 min reset intervals was applied to 1 mm thick CdTe detectors. It was found that the 0.5 s reset duration and 5 min reset interval were able to stabilize the detector performance at 35degC.
Keywords :
II-VI semiconductors; cadmium compounds; particle detectors; radioisotope imaging; semiconductor counters; wide band gap semiconductors; CdTe - Interface; energy resolution; nuclear medicine systems; periodic bias reset technique; polarization effect; semiconductor radiation detectors; size 1 mm; temperature 30 degC; temperature 35 degC; time 0.5 s to 60 s; time 1 min to 20 min; voltage 500 V; voltage bias; Circuits; Diodes; Energy resolution; Gamma ray detection; Nuclear medicine; Polarization; Pulse amplifiers; Semiconductor radiation detectors; Temperature; Voltage; CdTe; energy resolution; polarization; semiconductor radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.897034