DocumentCode
1098981
Title
Structural and Electrical Properties of Mn-Doped 
Thin Film Grown on  films were well formed on a TiN/SiO<sub>2</sub>/Si substrate at 200degC without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B<sub>4</sub>T<sub>3</sub> films grown at 200degC showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47 fF/mum<sup>2</sup> at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/degC and 667 ppm/V<sup>2</sup>, respectively, with a low leakage current density of 7.8 times 10<sup>-8</sup> A/cm<sup>2</sup> at 2 V. Therefore, the M-B<sub>4</sub>T<sub>3</sub> thin film grown on a TiN/SiO<sub>2</sub>/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>bismuth compounds; capacitance; current density; high-k dielectric thin films; interstitials; leakage currents; manganese; permittivity; sputter deposition; vacancies (crystal); Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>:Mn; RF MIM capacitors; RF magnetron sputtering; TiN-SiO<sub>2</sub>-Si; capacitance density; current density; dielectric constant; electrical properties; frequency 100 kHz; leakage current; oxygen interstitial ions; oxygen partial pressure; oxygen vacancies; pressure 2.8 mtorr; quadratic voltage coefficients; radio frequency metal-insulator-metal capacitors; size 39 nm; structural properties; temperature 200 degC; temperature coefficients; thin film; voltage 2 V; Bismuth; Capacitance; Dielectric losses; High-K gate dielectrics; Leakage current; Radio frequency; Semiconductor films; Sputtering; Substrates; Tin; <formula formulatype=)
$hbox{Bi}_{4}hbox{Ti}_{3}hbox{O}_{12}$ ; high-$k$
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2022892
Filename
5109674
Link To Document