Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity

Author

Truyen, D. ; Boch, J. ; Sagnes, B. ; Renaud, N. ; Leduc, E. ; Arnal, S. ; Saigné, F.

Author_Institution

IES UMR UM2/CNRS 5214, Univ. Montpellier II, Nantes

Volume

54

Issue

4

fYear

2007

Firstpage

1025

Lastpage

1029

Abstract

A temperature dependence analysis of single event transient currents induced by heavy-ions using TCAD simulation is performed in the 218 to 418 K range on a 0.18 mum SRAM cell manufactured by ATMEL. The single event upset (SEU) phenomena depends on both the heavy-ions-induced transient current and the technology. Temperature is shown to have a significant impact on the trends of heavy-ions-induced current. The SEU sensitivity is then expected to exhibit a large temperature dependence. However, a small influence on the SEU sensitivity is reported in this work on the studied technology.

Keywords

SRAM chips; ion beam effects; technology CAD (electronics); SRAM; device simulation; heavy-ion induced parasitic current; heavy-ions-induced transient current; single event transient currents; single event upset sensitivity; size 0.18 mum; temperature 218 K to 418 K; temperature dependence; temperature dependence analysis; temperature effect; Analytical models; Discrete event simulation; Poisson equations; Random access memory; Semiconductor device modeling; Semiconductor process modeling; Single event upset; Temperature dependence; Temperature distribution; Temperature sensors; Heavy-ion; SRAM; single event transient; single event upset sensitivity; technology computer-aided design (TCAD) simulation; temperature dependence;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.894298

Filename

4291796