Title :
Tunnel effect in GaInAsP/InP double heterostructure diode
Author :
Matsui, Takashi ; Ohtsuka, K. ; Abe, Y. ; Ogata, Hiroaki
Author_Institution :
Mitsubishi Electr. Corp., Hyogo
fDate :
9/15/1988 12:00:00 AM
Abstract :
Negative differential resistance in a GaInAsP/InP double heterostructure diode with a pn junction annealed at 550-600°C is demonstrated. It is found that negative differential resistance is caused by the diffusion of impurities, Zn and Te, into the undoped GaInAsP layer
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; negative resistance; tunnel diodes; double heterostructure diode; negative differential resistance; pn junction; tunnel effect;
Journal_Title :
Electronics Letters
