Title :
A Novel Feature of Neutron-Induced Multi-Cell Upsets in 130 and 180 nm SRAMs
Author :
Yahagi, Y. ; Yamaguchi, H. ; Ibe, E. ; Kameyama, H. ; Sato, M. ; Akioka, T. ; Yamamoto, S.
Author_Institution :
Hitachi Ltd., Kanagawa
Abstract :
Bit-multiplicity of neutron-induced single event upsets (SEU) in CMOS SRAMs formed with 130 and 180 nm technologies was analyzed using mono-energetic, quasi-mono-energetic, and spallation neutron sources in various accelerator facilities. The energy dependence of the ratio of multi-cell upsets (MCUs) to the total number of upsets can be described by a Weibull-type function with the threshold energy of the MCU. The 130 nm SRAMs show a novel feature of multi-cell upsets (MCUs) including frequency distribution of the multiplicity of error bits. In the case of the 130 nm SRAM, the probability function of the MCU can be expressed as a sum of exponential and Lorentzian functions of the multiplicity of error bits. According to previous results of 3-dimensional device simulation, the Lorentzian component can be due to bipolar action.
Keywords :
CMOS memory circuits; SRAM chips; Weibull distribution; exponential distribution; neutron effects; CMOS SRAMs; Lorentzian function; Weibull-type function; bit-multiplicity; exponential function; frequency distribution; monoenergetic neutron source; neutron-induced multicell upsets; neutron-induced single event upsets; probability function; quasimono-energetic neutron source; size 130 nm; size 180 nm; spallation neutron source; CMOS technology; Distribution functions; Error correction codes; Frequency; Identity-based encryption; Neutrons; Random access memory; Semiconductor device testing; Semiconductor devices; Single event upset; Bipolar action; Lorentzian; SRAM; distribution function; frequency distribution; mono-energetic neutron; multi-cell upset (MCU); quasi-mono-energetic neutron; single event upset (SEU); spallation neutron;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.897066
