A Novel Feature of Neutron-Induced Multi-Cell Upsets in 130 and 180 nm SRAMs

Author

Yahagi, Y. ; Yamaguchi, H. ; Ibe, E. ; Kameyama, H. ; Sato, M. ; Akioka, T. ; Yamamoto, S.

Author_Institution

Hitachi Ltd., Kanagawa

Volume

54

Issue

4

fYear

2007

Firstpage

1030

Lastpage

1036

Abstract

Bit-multiplicity of neutron-induced single event upsets (SEU) in CMOS SRAMs formed with 130 and 180 nm technologies was analyzed using mono-energetic, quasi-mono-energetic, and spallation neutron sources in various accelerator facilities. The energy dependence of the ratio of multi-cell upsets (MCUs) to the total number of upsets can be described by a Weibull-type function with the threshold energy of the MCU. The 130 nm SRAMs show a novel feature of multi-cell upsets (MCUs) including frequency distribution of the multiplicity of error bits. In the case of the 130 nm SRAM, the probability function of the MCU can be expressed as a sum of exponential and Lorentzian functions of the multiplicity of error bits. According to previous results of 3-dimensional device simulation, the Lorentzian component can be due to bipolar action.

Keywords

CMOS memory circuits; SRAM chips; Weibull distribution; exponential distribution; neutron effects; CMOS SRAMs; Lorentzian function; Weibull-type function; bit-multiplicity; exponential function; frequency distribution; monoenergetic neutron source; neutron-induced multicell upsets; neutron-induced single event upsets; probability function; quasimono-energetic neutron source; size 130 nm; size 180 nm; spallation neutron source; CMOS technology; Distribution functions; Error correction codes; Frequency; Identity-based encryption; Neutrons; Random access memory; Semiconductor device testing; Semiconductor devices; Single event upset; Bipolar action; Lorentzian; SRAM; distribution function; frequency distribution; mono-energetic neutron; multi-cell upset (MCU); quasi-mono-energetic neutron; single event upset (SEU); spallation neutron;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.897066

Filename

4291803