Title :
Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrate
Author :
Ogawa, Matsuto ; Kamiya, Takeshi
Author_Institution :
University of Tokyo, Tokyo, Japan
fDate :
3/1/1985 12:00:00 AM
Abstract :
The backgating effect on FET´S fabricated both on a Cr-doped HB and on an undoped LEC substrate is investigated. The deep impurity compensation is found to influence the backgating effect both through the formation of the electric dipole layer at the interface between the n-channel and i-substrate, and through the voltage drop in the semi-insulating substrate.
Keywords :
Analog integrated circuits; Electrodes; Gallium arsenide; Impurities; Ion implantation; Leakage current; MESFET integrated circuits; Substrates; Testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.21979
