Title :
Breakdown voltage improvement for thin-film SOI power MOSFET´s by a buried oxide step structure
Author :
Kim, I.J. ; Matsumoto, S. ; Sakai, T. ; Yachi, T.
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
fDate :
5/1/1994 12:00:00 AM
Abstract :
Numerical simulations are performed to demonstrate that a new SOI power MOSFET structure, namely buried oxide step structure (BOSS), introduces a high electric field peak near the buried oxide step and that this peak reduces the height of the other electric field peaks within thin silicon layer. The relaxation of these peaks results in higher breakdown voltages at much higher impurity concentrations than those in the conventional structure.<>
Keywords :
electric breakdown of solids; high field effects; insulated gate field effect transistors; power transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; simulation; thin film transistors; Si; TFT; breakdown voltage improvement; buried oxide step structure; high electric field peak; impurity concentrations; numerical simulations; thin-film SOI power MOSFET; Dielectric substrates; Impurities; MOSFET circuits; Numerical simulation; Performance analysis; Power MOSFET; Shape; Silicon; Thin film devices; Transistors;
Journal_Title :
Electron Device Letters, IEEE
