Title :
Optimization of series resistance in sub-0.2 μm SOI MOSFET´s
Author :
Su, L.T. ; Sherony, M.J. ; Hang Hu ; Chung, J.E. ; Antoniadis, D.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
The optimization of device series resistance in ultra-thin film SOI devices is studied through 2-D simulations and process experiments. The series resistance is dependent on the contact resistivity of the silicide to silicon and the silicide geometry. To achieve low series resistance, very thin silicides that do not fully consume the SOI film are needed. A novel cobalt salicidation technology using titanium/cobalt laminates is used to demonstrate sub-0.2 μm, thin-film SOI devices with excellent performance and very low device series resistance.
Keywords :
cobalt; electric resistance; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thin film transistors; 0.2 micron; 2D simulations; Co salicidation technology; Co-Ti; CoSi/sub 2/; SOI MOSFET; Si; Ti/Co laminates; contact resistivity; process experiments; series resistance; silicide geometry; ultrathin film SOI devices; Cobalt; Conductivity; Contact resistance; Immune system; MOSFET circuits; Medical simulation; Semiconductor films; Silicides; Silicon; Thin film devices;
Journal_Title :
Electron Device Letters, IEEE
