Title :
High performance ultrathin SOI MOSFET´s obtained by localized oxidation
Author :
Faynot, O. ; Giffard, B.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fDate :
5/1/1994 12:00:00 AM
Abstract :
In this paper, we present a new and simple method to process ultrathin fully depleted SOI MOSFET´s. Series resistance problems in the full-wafer thinning method are presented and compared with our locally thinned process. Device design of the method is also discussed in terms of current level. The comparison of different process architectures allows us to define the best design rules for these transistors. To validate the method, experimental characteristics of locally thinned accumulation-mode MOSFET´s are presented.<>
Keywords :
insulated gate field effect transistors; oxidation; semiconductor technology; semiconductor-insulator boundaries; silicon; Si; accumulation-mode MOSFET; current level; design rules; full-wafer thinning method; localized oxidation; locally thinned process; process architectures; series resistance; transistors; ultrathin SOI MOSFET; Design methodology; Etching; Implants; MOS devices; MOSFET circuits; Oxidation; Process design; Semiconductor films; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
