DocumentCode
1099299
Title
Gain of a heterojunction bipolar phototransistor
Author
Chand, Naresh ; Houston, Peter A. ; Robson, Peter N.
Author_Institution
University of Illinois at Urbana-Champaign, Urbana, IL
Volume
32
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
622
Lastpage
627
Abstract
Analytical expressions have been derived for the collector current, optical gain, and quantum efficiency for a heterojunction, bi-polar phototransistor (HPT). These expressions can be utilized to optimize the current gain and quantum efficiency for HPT design. The presence of avalanche multiplication in the base-collector junction has been taken into account and shown to be a significant factor in determining the gain of an InGaAs/InP phototransistor. Experimental results of optical gain versus the collector-emitter voltage can only be explained in terms Of avalanche multiplication.
Keywords
Electron emission; Heterojunctions; Indium gallium arsenide; Indium phosphide; Optical devices; Optical receivers; Optical sensors; Phototransistors; Stimulated emission; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.21988
Filename
1484734
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