3-D Vertical Dual-Layer Oxide Memristive Devices

Dual-layer resistive switching memory devices with WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit well-characterized analog switching characteristics and small mismatch in electrical characteristics for devices formed at the two layers. The 3-D vertical device structure allows higher storage density and larger connectivity for neuromorphic computing applications. We show that the vertical devices exhibit potentiation and depression characteristics similar to planar devices, and can be programmed independently with no crosstalk between the layers.