• DocumentCode
    1099312
  • Title

    Modeling the generation current due to donor-acceptor twins in silicon p-n junctions

  • Author

    Cerofolini, G.F. ; Polignano, M.L. ; Savoini, I. ; Vanzi, Massimo

  • Author_Institution
    SGS-Ates Componenti Elettronici SpA, Central R & D, Agrate MI, Italy
  • Volume
    32
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    628
  • Lastpage
    631
  • Abstract
    The experimental static current-voltage I-V characteristics of almost ideal silicon p-n junctions are not adequately described by the classic Sah-Noyce-Shockley theory. The I-V characteristics are accurately modeled by admitting the presence of a new class of defects in addition to Shockley-Read-Hall generation-recombination centers. The new center, modeled as a donor-acceptor twin, behaves as a pure generation center.
  • Keywords
    Character generation; Current density; Current-voltage characteristics; Diodes; Helium; Ionization; P-n junctions; Rectifiers; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.21989
  • Filename
    1484735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099312