• DocumentCode
    1099379
  • Title

    Hooge parameters for various FET structures

  • Author

    Duh, Kuang Hann ; Van Der Ziel, Aldert

  • Author_Institution
    General Electric Company, Syracuse, NY
  • Volume
    32
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    662
  • Lastpage
    666
  • Abstract
    We present here values for the Hooge parameters αHof various FET structures that are one or more orders of magnitude smaller than the value 2 × 10-3that was first proposed. It cannot be said for certain which of these values are due to mobility-fluctuation noise and which represent number-fluctuation noise, but it seems reasonable to assume that the lowest values of αHare more likely due to mobility fluctuations.
  • Keywords
    Conductivity; Density estimation robust algorithm; Doping; FETs; Fluctuations; MOSFET circuits; Statistics; Tin; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.21995
  • Filename
    1484741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099379