Title :
Ga0.47In0.53As metal-semiconductor-metal photodiodes using a lattice mismatched Al0.4Ga0.6As Schottky assist layer
Author :
Kikuchi, Takashi ; Ohno, Hideo ; Hasegawa, Hiroshi
Author_Institution :
Fac. of Eng., Hokkaido Univ., Sapporo
fDate :
9/15/1988 12:00:00 AM
Abstract :
Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47 In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GaInAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; 650 ps; GaInAs-AlGaAs; Schottky assist layer; Schottky barrier height; capacitance; interdigitated metal electrodes; lattice mismatched; metal-semiconductor-metal photodiodes; self-alignment technique;
Journal_Title :
Electronics Letters
