• DocumentCode
    1099434
  • Title

    Ga0.47In0.53As metal-semiconductor-metal photodiodes using a lattice mismatched Al0.4Ga0.6As Schottky assist layer

  • Author

    Kikuchi, Takashi ; Ohno, Hideo ; Hasegawa, Hiroshi

  • Author_Institution
    Fac. of Eng., Hokkaido Univ., Sapporo
  • Volume
    24
  • Issue
    19
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    1208
  • Lastpage
    1210
  • Abstract
    Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47 In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GaInAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; 650 ps; GaInAs-AlGaAs; Schottky assist layer; Schottky barrier height; capacitance; interdigitated metal electrodes; lattice mismatched; metal-semiconductor-metal photodiodes; self-alignment technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099434