• DocumentCode
    1099438
  • Title

    The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers

  • Author

    Mou-Shiung Lin ; Lin, Mou-Shiung

  • Author_Institution
    IBM General Technology Division, Essex Junction, VT
  • Volume
    32
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    700
  • Lastpage
    710
  • Abstract
    The current equation based on the classical model of mobility degradation due to the gate field fails at V_{GS} - V_{T} = 11, 7.5, and 4.5 V for MOSFET\´s with tOX= 450, 350, and 250 Å, respectively, at room temperature and at very low VDS. The failure is believed to be caused by the quantization of inversion carriers in the deep potential well and the populating of the upper subbands in
  • Keywords
    Degradation; Electrons; Electrooptic effects; Equations; MOSFET circuits; Particle scattering; Quantization; Quantum mechanics; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22001
  • Filename
    1484747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099438