DocumentCode :
1099438
Title :
The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers
Author :
Mou-Shiung Lin ; Lin, Mou-Shiung
Author_Institution :
IBM General Technology Division, Essex Junction, VT
Volume :
32
Issue :
3
fYear :
1985
fDate :
3/1/1985 12:00:00 AM
Firstpage :
700
Lastpage :
710
Abstract :
The current equation based on the classical model of mobility degradation due to the gate field fails at 
= 11, 7.5, and 4.5 V for MOSFET\´s with tOX = 450, 350, and 250 Å, respectively, at room temperature and at very low VDS. The failure is believed to be caused by the quantization of inversion carriers in the deep potential well and the populating of the upper subbands in
= 11, 7.5, and 4.5 V for MOSFET\´s with tKeywords :
Degradation; Electrons; Electrooptic effects; Equations; MOSFET circuits; Particle scattering; Quantization; Quantum mechanics; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22001
Filename :
1484747
Link To Document :
