DocumentCode
1099453
Title
Interface studies of MBE-grown GaInAs/GaAsSb heterostructures lattice-matched to InP by Auger electron spectroscopy
Author
Fujii, T. ; Nakata, Y. ; Sugiyama, Y. ; Toda, Y. ; Miyauchi, E.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
24
Issue
19
fYear
1988
fDate
9/15/1988 12:00:00 AM
Firstpage
1210
Lastpage
1211
Abstract
The first interface study of an MBE-grown GaInAs/GaAsSb heterostructure lattice-matched to InP has been performed by Auger electron spectroscopy combined with ion sputtering. No surface segregation of Sb in the GaInAs/GaAsSb heterostructure was observed. The measured interface width of this heterostructure was found to be 2.2 nm by monitoring the Auger peak-to-peak height of the Sb MNN transition under 0.5 kV Ar+ ion sputtering
Keywords
Auger effect; electron spectroscopy; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; Auger electron spectroscopy; Auger peak-to-peak height; GaInAs-GaAsSb; InP; MBE-grown; MNN transition; heterostructure; interface width; ion sputtering; surface segregation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
29163
Link To Document