A high short-circuit current inversion layer poly-Si solar cell

An IL/MIS poly-Si solar cell is fabricated. Its short-circuit current reveals a very high value of 32.8 mA/cm². During fabrication, the front side of poly-Si wafer has to be polished for 2 min to obtain a mirror-like surface. The thin oxide was grown at 400°C in N2/O2ambient, and SiO film was evaporated at a rate of 5 Å/s which produces the highest VOCand ISC. The grid width and grid spacing has been optimized experimentally to be 7 and 100 µm, respectively. Under AM1 light intensity, the best cell shows a conversion efficiency of 10.41 percent (total area), short-circuit current density of 32.8 mA/cm², and open-circuit voltage of 0.544 V.