• DocumentCode
    1099479
  • Title

    The influence of donor neutralization on the transfer characteristics of MODFET´s at 77 K: Theory and experiment

  • Author

    Masselink, W.T. ; Drummond, T.J. ; Klem, J. ; Kopp, W. ; Chang, Y.C. ; Ponse, F. ; Morkoç, H.

  • Author_Institution
    University of Illinois, Urbana, IL
  • Volume
    32
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    713
  • Lastpage
    716
  • Abstract
    Calculations and experiments on GaAs/AlGaAs MODFET´s at 77 K show that due to neutralization of the relatively deep donors an increase in gate voltage will neither increase the two-dimensional electron concentration nor introduce free electrons into the AlGaAs for some range of gate voltages. The corresponding leveling off of drain saturation current is more pronounced in depletion- than in enhancement-mode devices.
  • Keywords
    Dynamic range; Electron devices; Electron mobility; HEMTs; MODFET circuits; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22004
  • Filename
    1484750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099479