Title :
The effect of holes on the injection-induced breakdown in n-channel MOSFET´s
Author :
Kotani, Norihiko ; Kawazu, Satoru
Author_Institution :
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fDate :
3/1/1985 12:00:00 AM
Abstract :
The holes generated by impact ionization are spread over the vicinity of the source. At high drain biases, the hole density near the source is found to be larger than the impurity doping level by simulation. The highly concentrated holes decrease source potential barrier at high drain voltages and the source current is significantly increased.
Keywords :
Auditory implants; CMOS technology; Capacitance; Circuits; Electric breakdown; Electron devices; Leakage current; MOS devices; MOSFETs; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22008
