DocumentCode
1099521
Title
The effect of holes on the injection-induced breakdown in n-channel MOSFET´s
Author
Kotani, Norihiko ; Kawazu, Satoru
Author_Institution
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Volume
32
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
722
Lastpage
725
Abstract
The holes generated by impact ionization are spread over the vicinity of the source. At high drain biases, the hole density near the source is found to be larger than the impurity doping level by simulation. The highly concentrated holes decrease source potential barrier at high drain voltages and the source current is significantly increased.
Keywords
Auditory implants; CMOS technology; Capacitance; Circuits; Electric breakdown; Electron devices; Leakage current; MOS devices; MOSFETs; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22008
Filename
1484754
Link To Document