• DocumentCode
    1099604
  • Title

    Frequency responses of graded-bandgap low-noise avalanche photodiodes

  • Author

    Rakshit, Sambhu ; Sarin, R.

  • Author_Institution
    Indian Institute of Technology, Kharagpur, India
  • Volume
    32
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    749
  • Lastpage
    752
  • Abstract
    Frequency responses of graded-bandgap low-noise avalanche photodiodes using AlcGa1-cAs, GaAS1-cSbc, and IncGa1-cAs have been computed using a novel hybrid computational technique. Response characteristics of nongraded structures have also been computed and a comparison is made.
  • Keywords
    Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Current density; Diodes; Frequency; Ionization; Optical fiber communication; Photonic band gap; Wideband;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22015
  • Filename
    1484761