Title :
Schottky diode for bipolar LSI´s consisting of an impurity-controlled Si substrate and Al(2%Si) electrode
Author :
Yamamoto, Yousuke ; Miyanaga, Hiroshi ; Sakai, Tadashi ; Sakai, Tetsushi
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Atsugi-shi, Kanagawa Prefecture, Japan
fDate :
4/1/1985 12:00:00 AM
Abstract :
Circuit design conditions of Schottky diodes have been investigated and the fabrication method for diodes suitable for the conditions has been proposed for applications to bipolar LSI´s, such as ECL RAM and Schottky TTL. It has been found that the desired Schottky diode for bipolar LSI´s is not an ideal device from the theoretical point of view. Desired built-in voltage, ideal factor, series resistance, and junction capacitance for the Schottky diode have been estimated, respectively, for the bipolar RAM and Schottky TTL. A proposed Schottky diode consists of an impurity-concentration-controlled
Keywords :
Electrodes; Fabrication; Impurities; Integrated circuit interconnections; Josephson junctions; Logic circuits; Schottky diodes; Silicon; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22018
