• DocumentCode
    1099640
  • Title

    Properties of the PbSe diode laser

  • Author

    Butler, J.F. ; Calawa, A.R. ; Rediker, R.H.

  • Author_Institution
    Lincoln Lab., Massachusetts Institute of Technology, Mass.
  • Volume
    1
  • Issue
    1
  • fYear
    1965
  • fDate
    4/1/1965 12:00:00 AM
  • Firstpage
    4
  • Lastpage
    7
  • Abstract
    Diode laser action has been obtained at 8.5μ with PbSe. This laser is of potential interest for terrestrial communications since its emission is in the 8-to-14-μ atmospheric window, a spectral region of high atmospheric transparency where attenuation due to scattering by haze is low. Fabrication techniques are described which are based on controlling carrier type and concentration by adjusting the Pb:Se ratio. Below threshold for laser action, the emission exhibits two spectral peaks, one near 8.5μ which increases superlinearly with current and another near 10.1μ which increases slowly with current. Laser action associated with the 8.5μ peak is observed above a threshold Current density of 2000 A cm-2. From measurements which did not resolve the cavity mode structure, the emission peak was found to shift to higher energies in a [100] oriented magnetic field at the rate of 7.1 \\times 10^{-8} eV per gauss, or 17 Mc/s per gauss. This is the expected shift if the emission is associated with band-to-band transitions. The threshold current decreased to a fraction of its zero field value in a magnetic field of approximately 10 kilogauss, then increased slowly with higher fields.
  • Keywords
    Communication system control; Diode lasers; Energy measurement; Gaussian processes; Laser modes; Magnetic field measurement; Optical attenuators; Optical device fabrication; Scattering; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1965.1072173
  • Filename
    1072173