DocumentCode :
1099640
Title :
Properties of the PbSe diode laser
Author :
Butler, J.F. ; Calawa, A.R. ; Rediker, R.H.
Author_Institution :
Lincoln Lab., Massachusetts Institute of Technology, Mass.
Volume :
1
Issue :
1
fYear :
1965
fDate :
4/1/1965 12:00:00 AM
Firstpage :
4
Lastpage :
7
Abstract :
Diode laser action has been obtained at 8.5μ with PbSe. This laser is of potential interest for terrestrial communications since its emission is in the 8-to-14-μ atmospheric window, a spectral region of high atmospheric transparency where attenuation due to scattering by haze is low. Fabrication techniques are described which are based on controlling carrier type and concentration by adjusting the Pb:Se ratio. Below threshold for laser action, the emission exhibits two spectral peaks, one near 8.5μ which increases superlinearly with current and another near 10.1μ which increases slowly with current. Laser action associated with the 8.5μ peak is observed above a threshold Current density of 2000 A cm-2. From measurements which did not resolve the cavity mode structure, the emission peak was found to shift to higher energies in a [100] oriented magnetic field at the rate of 7.1 \\times 10^{-8} eV per gauss, or 17 Mc/s per gauss. This is the expected shift if the emission is associated with band-to-band transitions. The threshold current decreased to a fraction of its zero field value in a magnetic field of approximately 10 kilogauss, then increased slowly with higher fields.
Keywords :
Communication system control; Diode lasers; Energy measurement; Gaussian processes; Laser modes; Magnetic field measurement; Optical attenuators; Optical device fabrication; Scattering; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1965.1072173
Filename :
1072173
Link To Document :
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