Title :
Disordering of Ga0.47In0.53As/InP multiple quantum well layers by sulphur diffusion
Author :
Pape, I.J. ; Wa, P. Li Kam ; David, J.P.R. ; Claxton, P.A. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
9/15/1988 12:00:00 AM
Abstract :
The disordering of Ga0.47In0.53As/InP MQW layers by the diffusion of sulphur is reported for the first time. Photoluminescence measurements indicate that this results in a larger bandgap material. SIMS profiles show that intermixing of both group III and V elements occurs between wells and barriers
Keywords :
III-V semiconductors; diffusion in solids; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; secondary ion mass spectroscopy; semiconductor quantum wells; sulphur; Ga0.47In0.53As-InP; MQW; SIMS profiles; disordering; intermixing; larger bandgap material; multiple quantum well layers; semiconductors;
Journal_Title :
Electronics Letters
