• DocumentCode
    1099711
  • Title

    Disordering of Ga0.47In0.53As/InP multiple quantum well layers by sulphur diffusion

  • Author

    Pape, I.J. ; Wa, P. Li Kam ; David, J.P.R. ; Claxton, P.A. ; Robson, P.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    24
  • Issue
    19
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    1217
  • Lastpage
    1218
  • Abstract
    The disordering of Ga0.47In0.53As/InP MQW layers by the diffusion of sulphur is reported for the first time. Photoluminescence measurements indicate that this results in a larger bandgap material. SIMS profiles show that intermixing of both group III and V elements occurs between wells and barriers
  • Keywords
    III-V semiconductors; diffusion in solids; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; secondary ion mass spectroscopy; semiconductor quantum wells; sulphur; Ga0.47In0.53As-InP; MQW; SIMS profiles; disordering; intermixing; larger bandgap material; multiple quantum well layers; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099711