• DocumentCode
    1099767
  • Title

    Tunneling effect in CdxHg1-xTe photodiodes

  • Author

    Placzek-Popko, Eva ; Pawlikowski, Janusz M.

  • Author_Institution
    Technical University of Wroclaw, Wroclaw, Poland
  • Volume
    32
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    842
  • Lastpage
    844
  • Abstract
    The current-voltage I-U characteristics and those of log I-U, dU/dI-U, and d2U/dI2-U of CdxHg1-xTe (x = 0.20-0.27) photodiodes were measured in the temperature range of 4.2-77 K. The data analysis indicates the backward-type behavior and both the elastic and inelastic resonant-tunneling effects. The resonant tunneling itself seems to originate from resonance-energy states (defect states) located within the junction area.
  • Keywords
    Annealing; Conductivity; Contact resistance; Electrical resistance measurement; Electron devices; Energy conversion; Geometry; Research and development; Solid state circuits; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22031
  • Filename
    1484777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099767