DocumentCode
1099774
Title
The computation of semiconductor sheet resistance
Author
Choma, John, Jr.
Author_Institution
Aerospace Corporation, Los Angeles, CA
Volume
32
Issue
4
fYear
1985
fDate
4/1/1985 12:00:00 AM
Firstpage
845
Lastpage
847
Abstract
The effect of a nonuniform impurity concentration on semiconductor sheet resistance is analytically investigated. It is shown that potentially significant modeling errors result from the tacit neglect of concentration nonuniformity.
Keywords
Bipolar transistors; Conductivity; Conductors; Implants; MOSFETs; Optical devices; Semiconductor impurities; Silicon; Slabs; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22032
Filename
1484778
Link To Document