DocumentCode
1099816
Title
Planar junctions in silicon on oxide grown using lateral epitaxy by seeded solidification
Author
Banerjee, S.K. ; Streetman, Ben G.
Author_Institution
University of Illinois at Urbana-Champaign, Urbana, IL
Volume
32
Issue
4
fYear
1985
fDate
4/1/1985 12:00:00 AM
Firstpage
850
Lastpage
853
Abstract
Current-voltage characteristics of large planar junctions fabricated in silicon on oxide have been studied. These junctions have slightly higher reverse leakage currents and slightly lower breakdown voltages than similar junctions fabricated in bulk silicon. The electrical properties of the junctions are dependent on the regrowth parameters of the silicon films. Fairly uniform junction properties are obtained over the entire sample.
Keywords
Epitaxial growth; Fabrication; Grain boundaries; High speed integrated circuits; Leakage current; P-n junctions; Semiconductor films; Silicon on insulator technology; Substrates; Windows;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22035
Filename
1484781
Link To Document