Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET´s

The noise and RF performance of recessed-gate GaAs ion-implanted MESFET´s as a function of various doping profiles has been theoretically investigated. The effects of implant energy and dose as well as varying deep-level concentration are included, Degradation of device performance with increasing deep-level concentration is predicted and the responsible physical mechanisms revealed. Also, an optimum gate recess depth is shown to exist. The study has indicated a number of design rules for the fabrication of optimized low-noise ion-implanted MESFET´s.