DocumentCode
1099904
Title
Dual-polarity nonvolatile MOS analogue memory (MAM) cell for neural-type circuitry
Author
Shimabukuro, R.L. ; Reedy, R.E. ; Garcia, G.A.
Author_Institution
Naval Oceans Syst. Center, San Diego, CA, USA
Volume
24
Issue
19
fYear
1988
fDate
9/15/1988 12:00:00 AM
Firstpage
1231
Lastpage
1232
Abstract
The design and fabrication of a nonvolatile MOS integrated circuit memory element which is capable of storing both positive and negative analogue data is reported. The memory value can be increased or decreased incrementally. This device is applicable to storage of weighting values in integrated circuit implementations of learning neural networks. Experimental results are reported
Keywords
MOS integrated circuits; VLSI; analogue storage; integrated memory circuits; neural nets; VLSI; dual polarity type cell; fabrication; integrated circuit implementations; learning neural networks; negative analogue data; neural-type circuitry; nonvolatile MOS analogue memory; weighting values;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
29178
Link To Document