• DocumentCode
    1099960
  • Title

    GaInAs/GaAs multiple quantum well reflection modulators

  • Author

    Dobbelaere, Wim ; Huang, Dijiang ; Kalem, Sid´Ali ; Morkoc, H.

  • Author_Institution
    Coordinated Sci. Lab., Illinois Univ., Urbana, IL
  • Volume
    24
  • Issue
    19
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    1239
  • Lastpage
    1241
  • Abstract
    The authors demonstrate a p-i-n reflection modulator consisting of a 50-period strained layer Ga0.85In0.15As/GaAs multiple quantum well and a 5-period AlAs/GaAs quarter-wave stack dielectric mirror, grown on a GaAs substrate by molecular beam epitaxy. They observed a relative change in the reflectivity of the modulator of 12% with 4.5 V reverse bias voltage and at 0.996 μm wavelength
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical modulation; optoelectronic devices; semiconductor quantum wells; 0.996 micron; 4.5 V; Ga0.85In0.15As-GaAs-AlAs; GaAs substrate; III-V semiconductors; MBE; PIN type; dielectric mirror; molecular beam epitaxy; multiple quantum well; optical transmission; optoelectronic device; p-i-n structure; quarter-wave stack; reflection modulators; reverse bias voltage; strained layer MQW;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099960