Title :
Compatibility in heterogeneous integration of a CdTe interdigitated photoconductor with an AlGaAs field-effect transistor
Author :
Fallahi, M. ; Therez, F. ; Esteve, D. ; Kendil, D. ; Barbe, M. ; Cohen-Solal, G.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
9/15/1988 12:00:00 AM
Abstract :
A CdTe photoconductor-AlGaAs/GaAs FET OEIC has been fabricated for the first time. The compatibility of such an integration is shown. Such an integration permits the use of high-quality optical compounds with performance electronic materials. A responsivity of 30 A/W at 0.77 μm has been obtained for integrated circuits. This integration opens a new perspective in heterostructure infrared OEICs
Keywords :
II-VI semiconductors; cadmium compounds; field effect integrated circuits; infrared detectors; integrated optoelectronics; photodetectors; 0.77 micron; AlGaAs field-effect transistor; AlGaAs-GaAs; CdTe; II-VI semiconductors; III-V semiconductors; IR imaging; compatibility; heterogeneous integration; heterostructure infrared OEICs; integrated circuits; integrated optoelectronics; interdigitated photoconductor;
Journal_Title :
Electronics Letters
