Title :
Monolithic pinHEMT receiver for long wavelength optical communications
Author :
Nobuhara, H. ; Hamaguchi, Hiroki ; Fujii, Teruya ; Aoki, O. ; Makiuchi, M. ; Wada, O.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
9/15/1988 12:00:00 AM
Abstract :
An AlInAs-GaInAs high electron mobility transistor (HEMT) has been monolithically integrated with an InP-GaInAs pin photodiode for the first time. Transconductance of the integrated HEMT is 270 mS/mm at 1 μm gate length. The high transconductance has resulted in improved receiver sensitivity, -23.7 dBm at 2 Gbit/s
Keywords :
field effect integrated circuits; high electron mobility transistors; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1 micron; 2 Gbit/s; 270 mS; AlInAs-GaInAs; III-V semiconductors; InP-GaInAs; OEIC integrated optoelectronics; PIN photodiode; gate length; high electron mobility transistor; high transconductance; integrated HEMT; long wavelength optical communications; monolithic receiver; p-i-n photodiode; pinHEMT receiver;
Journal_Title :
Electronics Letters
