Title :
Anodic nitridation of silicon and silicon dioxide
Author :
Wong, S. Simon ; Oldham, William G.
Author_Institution :
Cornell University, Ithaca, NY
fDate :
5/1/1985 12:00:00 AM
Abstract :
Anodic nitridation of Si wafers and SiO2films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge trapping properties were studied.
Keywords :
Annealing; Backscatter; Electrons; Etching; Plasma applications; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Spectroscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22056
