Title :
A SPICE modeling technique for GaAs MESFET IC´s
Author :
Huang, Chern I. ; Thorbjornsen, Arthur R.
Author_Institution :
Air Force Wright Aeronautical Laboratories, Wright-Patterson Air Force Base, OH
fDate :
5/1/1985 12:00:00 AM
Abstract :
A vertically integrated device modeling technique for GaAs IC´s is presented for use in circuit simulation. Most of the SPICE2 capability can be utilized for modeling the gate transit time and parasitic effects. A computer program has also been developed to extract model parameters from the measured device data.
Keywords :
Current measurement; Delay effects; Electrical resistance measurement; Equations; Gallium arsenide; Integrated circuit modeling; MESFET integrated circuits; Mathematical model; SPICE; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22060
